BUH517 Datasheet, PDF (2/3 Pages) STMicroelectronics – CRT HORIZONTAL DEFLECTION HIGH VOLTAGE NPN FASTSWITCHING TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUH517
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.25A
VBEsat
Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=5A ;IB=1.25A
VCE=1700V; VBE=0
Tj=125
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=5V
Switching times
ts
Storage time
tf
Fall time
IC=5A;IB1=1.25A;IB2=2.5A;
VCC=400V
MIN TYP. MAX UNIT
700
V
10
V
1.5
V
1.3
V
1.0
2.0
mA
100
µA
6
2.7
3.9
µs
190
280
ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
2.08
UNIT
/W
2