BUH515 Datasheet, PDF (2/3 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUH515
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.25A
VBEsat
Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=5A ;IB=1.25A
VCE=1500V; VBE=0
T_j=125
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=5V
Switching times
ts
Storage time
tf
Fall time
IC=5A;IB1=1.25A;IB2=2.5A;
VCC=400V
MIN TYP. MAX UNIT
700
V
10
V
1.5
V
1.3
V
0.2
2
mA
100
µA
6
12
2.7
3.9
µs
190 280
ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
2.5
UNIT
/W
2