BUH315 Datasheet, PDF (2/3 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUH315
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.75A
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.75A
ICES
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
Switching times resistive load
VCE=1500V; VBE=0
VEB=5V; IC=0
IC=3A ; VCE=5V
T_j=100
ts
Storage time
tf
Fall time
IC=3A;IB1=0.75A;IB2=1.5A
VCC=400V
MIN TYP. MAX UNIT
700
V
10
V
1.5
V
1.3
V
0.2
mA
0.1
mA
6
12
3.5
2.4
µs
0.2
µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
2.8
UNIT
/W
2