BUH1015 Datasheet, PDF (2/3 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUH1015
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0
VCEsat Collector-emitter saturation voltage IC=10A; IB=2A
VBEsat
Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=10A; IB=2A
VCE=1500V ;VBE=0
T_j=125°C
VEB=5V; IC=0
hFE
DC current gain
IC=10A ; VCE=5V
Switching times
ts
Storage time
tf
Fall time
IC=10A;IB1=2A;IB2=-6A;
VCC=400V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-case} Thermal resistance junction case
MIN TYP. MAX UNIT
10
V
700
V
1.5
V
1.5
V
0.2
2
mA
0.1
mA
7
10
14
1.5
µs
110
ns
MAX
0.78
UNIT
/W
2