BU941ZPFI Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACT ERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCL
Clamping voltage
IC=0.1 A ;IB=0
VCE_(sat-1) Collector-emitter saturation voltage IC=8A; IB=100m A
VCE_(sat-2) Collector-emitter saturation voltage IC=10A; IB=250m A
VCE_(sat-3) Collector-emitter saturation voltage IC=12A; IB=300m A
VBE_(sat-1) Base-emitter saturation voltage
IC=8A; IB=100m A
VBE_(sat-2) Base-emitter saturation voltage
IC=10A; IB=250m A
VBE_(sat-3) Base-emitter saturation voltage
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
IC=12A; IB=300m A
VCE=300V; IB=0
TC=125
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=10V
VF
Diode forward voltage
IF=10A
Product Specification
BU941ZPFI
MIN TYP. MAX UNIT
350
500
V
1.8
V
1.8
V
2.0
V
2.2
V
2.5
V
2.7
V
0.1
0.5
mA
20
mA
300
2.5
V
2