BU931ZP Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACT ERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCL
Clamping voltage
IC=0.1 A ;IB=0
VCE_(sat-1) Collector-emitter saturation voltage IC=7A ;IB=70mA
VCE_(sat-2) Collector-emitter saturation voltage IC=8A; IB=100m A
VCE_(sat-3) Collector-emitter saturation voltage IC=10A; IB=150m A
VBE_(sat-1) Base-emitter saturation voltage
IC=8A; IB=100m A
VBE_(sat-2) Base-emitter saturation voltage
IC=10A; IB=250m A
VBE-1
Base-emitter on voltage
IC=5A ; VCE=2V
VBE-2
Base-emitter on voltage
IC=10A ; VCE=2V
ICL
ICE(_off)
IEBO
Clamping current
Collector-emitter off state current
Emitter cut-off current
VCE =350V; IB=0
VCC =16V; VBE=300mV
Tj=125
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=2V
VF
Diode forward voltage
IF=10A
Product Specification
BU931ZP
MIN TYP. MAX UNIT
350
500
V
1.6
V
1.8
V
2.0
V
2.2
V
2.5
V
1.67
V
2.0
V
0.25 mA
0.5
mA
50
mA
300
2.5
V
2