BU931R Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU931R BU932R
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
VCEsat-1
VCEsat-2
VCEsat-3
VBEsat-1
VBEsat-2
ICEO
ICES
IEBO
Collector-emitter
sustaining voltage
BU931R
BU932R
Collector-emitter saturation
Voltage
Only for BU931R
Collector-emitter
saturation voltage
BU931R
BU932R
Collector-emitter saturation
Voltage
Only for BU931R
Base-emitter
saturation voltage
BU931R
BU932R
Base-emitter saturation voltage
Only for BU931R
Collector
cut-off current
BU931R
BU932R
Collector
cut-off current
BU931R
BU932R
Emitter cut-off current
IC=100mA ; IB=0
IC=7A; IB=70mA
IC=8A; IB=100mA
IC=8A; IB=150mA
IC=10A; IB=250mA
IC=8A; IB=100mA
IC=8A; IB=150mA
IC=10A; IB=250mA
VCE=400V ;IB=0
VCE=450V ;IB=0
VCE=400V ;VBE=0
TC=125
VCE=450V ;VBE=0
TC=125
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=10V
VF
Diode forward voltage
IF=10A
Switching times
ts
Storage time
tf
Fall time
IC=7A ;IB=70mA ;VBE=0;RBE=47@
VCC=12V,V_clamp=300V;L=7mH
MIN TYP. MAX UNIT
400
V
450
1.6
V
1.8
V
1.8
V
2.2
V
2.5
V
1.0 mA
1.0
5.0
mA
1.0
5.0
50 mA
300
2.8
V
15
µs
0.5
µs
2