BU908 Datasheet, PDF (2/3 Pages) Micro Electronics – BU908

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU908
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0;
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0;
VCEsat Collector-emitter saturation voltage IC=3.2A;IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=3.2A;IB=0.8A
ICBO
Collector cut-off current
VCB=1500V;IE=0
IEBO
Emitter cut-off current
VEB=5V;IC=0
hFE
DC current gain
IC=1.5A ; VCE=5V
fT
Transition frequency
IE=0 ; VCB=10V;f=1MHz
MIN TYP. MAX UNIT
700
V
7
V
2.0
V
1.3
V
1.0 mA
0.1 mA
8
7
MHz
2