BU626A Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – NPN SILICON POWER TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU626A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0;
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0;
VCEsat Collector-emitter saturation voltage IC=8A;IB=2.5 A
VBEsat
Base-emitter saturation voltage
IC=8A;IB=2.5 A
ICES
Collector cut-off current
VCE=1000V;VBE=0
hFE-1
DC current gain
IC=10A ; VCE=1.5V
hFE-2
DC current gain
IC=2.5A ; VCE=10V
fT
Transition frequency
IC=0.1A ; VCE=10V
tf
Fall time
IC=8A;IB1=-IB2=2.5A;
MIN TYP. MAX UNIT
400
V
7
V
3.3
V
2.2
V
1.0
mA
10
15
6
MHz
1
µs
2