BU526 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU526 BU526A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
BU526
BU526A
IC=50mA; IB=0;
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0;
VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=1 A
VCEsat-2 Collector-emitter saturation voltage IC=8A;IB=3 A
VBEsat
Base-emitter saturation voltage
IC=5A;IB=1 A
ICBO
Collector cut-off current
VCB=900V;IE=0
IEBO
Emitter cut-off current
VEB=7V;IC=0
hFE
DC current gain
IC=1A ; VCE=5V
MIN TYP. MAX UNIT
400
V
460
7
V
1.5
V
5.0
V
1.6
V
0.1
mA
0.1
mA
15
45
2