BU508DX Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU508DX
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
VCE_(sat) Collector-emitter saturation voltage IC=4.5A ;IB=1.6A
VBE_(sat) Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=4.5A ;IB=1.6A
VCE=1500V, VBE=0
T_j=125
VEB=5.0V; IC=0
hFE
DC current gain
IC=0.5A ; VCE=5V
VF
Diode forward voltage
IF=4.5A
fT
Transition frequency
IE=0.1A ; VCE=5V
COB
Output capacitance
VCB=10V;IE=0;f=1.0MHz
MIN TYP. MAX UNIT
700
V
1.0
V
1.3
V
1.0
2.0
mA
300
mA
10
30
1.6
2.0
V
7
MHz
125
pF
2