BU508DFI Datasheet, PDF (2/3 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2A
VBEsat Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=4.5A ;IB=2A
VCE=1500V, VBE=0
T_j=125
VEB=5.0V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=5V
VF
Diode forward voltage
IF=4A
ts
Storage time
tf
Fall time
IC=4.5A ; VCC=140V
IB=1.8A; LB=3mH
LC=0.9mH
Product Specification
BU508DFI
MIN TYP. MAX UNIT
700
V
1.0
V
1.3
V
1.0
2.0
mA
300
mA
8
7
MHz
2.0
V
7
µs
0.55
µs
2