BU508D Datasheet, PDF (2/3 Pages) Wing Shing Computer Components – SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU508D
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0
VCEsat Collector-emitter saturation voltage IC=4.5A; IB=2.0A
VBEsat
Base-emitter saturation voltage
IC=4.5A; IB=2.0A
hFE
DC current gain
IC=1A ; VCE=5V
ICES
Collector cut-off current
IEBO
Emitter cut-off current
VF
Diode forward voltage
fT
Transition frequency
Cob
Collector capacitance
VCE=1500V; VBE=0
VEB=5V; IC=0
IF=4.0A
IC=0.1A ; VCE=5V
IE=0;VCB=10V;f=1MHz
ts
Storage time
tf
Fall time
IC=4.5A ; IB=1.4A
LB=10µH
MIN TYP. MAX UNIT
700
V
1.0
V
1.5
V
8
1.0
mA
300
mA
2.0
V
4
MHz
125
pF
7
µs
1.0
µs
2