BU508AX Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU508AX
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=1.6A
VBEsat Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=4.5A ;IB=2A
VCE=RatedVCE; VBE=0
TC=125
VEB=6.0V; IC=0
hFE
DC current gain
IC=100mA ; VCE=5V
fT
Transition frequency
IE=0.1A ; VCE=5V
Cob
Output capacitance
VCB=10V;IE=0;f=1.0MHz
MIN TYP. MAX UNIT
700
V
1.0
V
1.1
V
1.0
2.0
mA
10
mA
6
13
30
7
MHz
125
pF
2