BU508AFI Datasheet, PDF (2/3 Pages) Unisonic Technologies – SILICON DIFFUSED POWER TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU508AFI
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2 A
VBEsat
Base-emitter saturation voltage
IC=4.5A ;IB=2 A
hFE
DC current gain
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=1A; VCE=5V
VCE=1500V; VBE=0
TC=125
VEB=5V; IC=0
fT
Transition frequency
IC=0.1A; VCE=5V;f=5MHz
ts
Storage time
tf
Fall time
IC=4.5A ; VCC=140V
IB=1.8A; LC=0.9mH
LB=3µH
MIN TYP. MAX UNIT
700
V
10
V
1.0
V
1.3
V
8
1.0
2.0
mA
0.1
mA
7
MHz
7
µs
0.55
µs
2