BU508AF Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU508AF
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4.5A; IB=1.6A
VBEsat
Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=4.5A ;IB=2A
VCE=RatedVCE; VBE=0
TC=125
VEB=6V; IC=0
hFE
DC current gain
IC=0.1A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
MIN TYP. MAX UNIT
700
V
7.5
13.5
V
1.0
V
1.1
V
1.0
2.0
mA
10
mA
6
30
7
MHz
125
pF
2