BU506DF Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU506DF
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0,L=25mH
VCEsat Collector-emitter saturation voltage IC=3A; IB=1.33A
VBEsat
Base-emitter saturation voltage
IC=3A; IB=1.33A
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
ICES
IEBO
DC current gain
Collector cut-off current
Emitter cut-off current
IC=3A ; VCE=5V
VCE=rated; VBE=0
T_j=125
VEB=6V; IC=0
VF
Diode forward voltage
IF=3A;
Switching times
ts
Storage time
tf
Fall time
ICM = 3 A; IB(_end) = 1A
LB = 12µH
MIN TYP. MAX UNIT
700
V
1.0
V
1.3
V
6
13
30
2.25
0.5
1.0
mA
200 mA
1.5
2.2
V
6.5
µs
0.7
µs
2