BU4508DF Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU4508DF
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=600mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.25A
VBEsat
Base-emitter saturation voltage
ICES
Collector cut-off current
hFE-1
DC current gain
IC=5A ;IB=1.25A
VCE=BVCES; VBE=0
TC=125
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
VF
Diode forward voltage
IF=5A
MIN TYP. MAX UNIT
800
V
7.5 13.5
V
3
V
1.03
V
1.0
2.0
mA
7
4.2
7.3
2.2
V
2