BU426 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(6.0A,375-400V,113W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU426 BU426A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BU426
BU426A
IC=100mA; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=2.5A; IB=0.5A
VCEsat-2 Collector-emitter saturation voltage IC=4A; IB=1.25A
VBEsat-1 Base-emitter saturation voltage
IC=2.5A; IB=0.5A
VBEsat-2
ICES
IEBO
Base-emitter saturation voltage
IC=4A; IB=1.25A
Collector cut-off current
BU426
BU426A
VCE=800V ;VBE=0
TC=125
VCE=900V ;VBE=0
TC=125
Emitter cut-off current
VEB=10V; IC=0
hFE
DC current gain
IC=0.6A ; VCE=5V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=2.5A ; VCC=250V
IB1=0.5A
IC=2.5A ; VCC=250V
IB1=0.5A; IB2=-1A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MIN TYP. MAX UNIT
375
V
400
1.5
V
3.0
V
1.4
V
1.6
V
1.0
2.0
mA
1.0
2.0
10
mA
30
60
0.5
µs
3.5
µs
0.5
µs
VALUE
1.1
UNIT
/W
2