BU408 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU408
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.2A
hFE
DC current gain
ICES
Collector cut-off current
IEBO
Emitter cut-off current
fT
Transition frequency
IC=2A ; VCE=5V
VCE=250V; VBE=0
TC=150
VEB=6V; IC=0
IC=0.5A ; VCE=10V
toff
Turn-off time
IC=6A ; IB=1.2A
MIN TYP. MAX UNIT
200
V
1.0
V
1.5
V
40
0.1
1.0
mA
1
mA
10
MHz
0.4
µs
2