BU2725DX Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=600mA ;IC=0
VCE(sat) Collector-emitter saturation voltage IC=7A ;IB=1.75 A
VBE(sat) Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=7A ;IB=1.75 A
VCE=BVCES; VBE=0
Tj=125
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=1V
VF
Diode forward voltage
IF=7A
Product Specification
BU2725DX
MIN TYP. MAX UNIT
7.5 13.5
V
1.0
V
0.78 0.86 0.95
V
1.0
2.0
mA
110
mA
19
3.8
7.8
2.2
V
2