BU2725AX Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2725AX
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
825
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
7.5 13.5
V
VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.75A
1.0
V
VBEsat
Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=7A ;IB=1.75A
VCE=BVCES; VBE=0
T_j=125
VEB=7.5V; IC=0
1.1
V
1.0
2.0
mA
1.0
mA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
22
hFE-2
DC current gain
IC=7A ; VCE=1V
4
6
8.5
2