BU2708DF Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=600mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4A ;IB=1.33 A
VBEsat
Base-emitter saturation voltage
ICES
Collector cut-off current
hFE-1
DC current gain
IC=4A ;IB=1.33 A
VCE=BVCES; VBE=0
T_j=125
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=1V
VF
Diode forward voltage
IF=4A
Product Specification
BU2708DF
MIN TYP. MAX UNIT
7.5
13.5
V
1.0
V
1.0
V
1.0
2.0
mA
15
3
6
7.3
1.6
V
2