BU2520D Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2520D
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
V(BR)EBO Emitter-base breakdown voltage
IB=600mA; IC=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A
VBEsat
Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=6A; IB=1.2A
VCE=ratedVCE; VBE=0
T_j=125
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
VF
Diode forward voltage
IF=6A
CC
Collector capacitance
IE=0 ;VCB=10V;f=1MHz
MIN TYP. MAX UNIT
800
V
7.5
13.5
V
5.0
V
1.3
V
1.0
2.0
mA
100
300
mA
23
5
7
10
2.2
V
115
pF
2