BU2515DF Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IB=600mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=0.9A
VBEsat
Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
IC=4.5A ;IB=0.9A
VCE=BVCES; VBE=0
T_j=125
VEB=6V; IC=0
IC=1.0A ; VCE=5V
IC=4.5A ; VCE=5V
VF
Diode forward voltage
IF=4.5A
Product Specification
BU2515DF
MIN TYP. MAX UNIT
7.5 13.5
V
5.0
V
1.0
V
1.0
2.0
mA
130
mA
13
5
8
10.2
2.2
V
2