BU2508A Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2508A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat-1 Collector-emitter saturation voltage IC=4.5A; IB=1.1A
VCEsat-2 Collector-emitter saturation voltage IC=4.5A; IB=1.29A
VBEsat
Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=4.5A; IB=1.7A
VCE=rated ;VBE=0
T_j=125°C
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=4.5A ; VCE=1V
CC
Collector capacitance
VCB=10V;f=1MHz
MIN TYP. MAX UNIT
700
V
7.5
13.5
V
5.0
V
1.0
V
1.3
V
1.0
2.0
mA
1.0
mA
6
13
26
4
5.5
7.5
80
pF
2