BU2507AF Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2507AF
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
V(BR)EBO Emitter-base breakdown voltage
IB=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8 A
VBEsat
Base-mitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
IC=4A ;IB=0.8 A
VCE=BVCES; VBE=0
TC=125
VEB=7.5V; IC=0
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
CC
Collector output capacitance
f=1MHz;VCB=10V
MIN TYP. MAX UNIT
700
V
7.5 13.5
V
5.0
V
1.1
V
1.0
2.0
mA
1.0
mA
17
5
7
9
68
pF
2