BU2506AF Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.79A
VBEsat
Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
IC=3A ;IB=0.79A
VCE=RatedVCE ;VBE=0
T_j=125
VEB=7.5V; IC=0
IC=0.3A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
Product Specification
BU2506AF
MIN TYP. MAX UNIT
700
V
7.5
V
5.0
V
1.1
V
1.0
2.0
mA
0.1
mA
12
3.8
5.5
7.5
2