BU208D Datasheet, PDF (2/3 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU208D
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS Collector-emitter sustaining voltage IC=0.1A; IB=0;
VCEsat Collector-emitter saturation voltage IC=4.5 A;IB=2 A
VBEsat
Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=4.5 A;IB=2 A
VCE=1500V;VBE=0
Tj=125
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
VF
Diode forward voltage
IF=4A
fT
Transition frequency
IC=0.1A ; VCE=5V
ts
Storage time
tf
Fall time
IC=4.5A;IB=1.8A;VCC=140V
LC=0.9Mh;LB=3µH
700
V
1.0
V
1.3
V
1.0
2.0
mA
300
mA
8
2.0
V
7
MHz
7
µs
0.55
µs
2