BU1508DX Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU1508DX
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=600mA ;IC=0
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0;L=25mH
VCEsat Collector-emitter saturation voltage IC=4.5A; IB=1.1A
VBEsat
Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=4.5A; IB=1.7A
VCE=rated;VBE=0
T_j=125
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4.5A ; VCE=1V
VF
Diode forward voltage
IF=4.5A
CC
Collector output capacitance
IE=0;f=1MHz;VCB=10V
MIN TYP. MAX UNIT
7.5 13.5
V
700
V
1.0
V
1.3
V
1.0
2.0
mA
140
390 mA
13
4
5.5 7.0
1.6 2.0
V
80
pF
2