BU133 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU133
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.5A
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.5A
ICBO
Collector cut-off current
VCB=750V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IC=0.2A ; VCE=10V
MIN TYP. MAX UNIT
250
V
7
V
1.5
V
1.4
V
0.1 mA
0.1 mA
15
80
8
MHz
2