BDX88C Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=-6A ;IB=-24mA
VCEsat-2 Collector-emitter saturation voltage IC=-12A ;IB=-120mA
VBEsat
Base-emitter saturation voltage
IC=-12A ;IB=-120mA
VBE
Base-emitter on voltage
IC=-6A ; VCE=-3V
hFE-1
DC current gain
IC=-5A ; VCE=-3V
hFE-2
DC current gain
IC=-6A ; VCE=-3V
hFE-3
ICBO
ICEO
IEBO
VF-1
VF-2
DC current gain
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Diode forward voltage
Diode forward voltage
IC=-12A ; VCE=-3V
VCB=-100V; IE=0
TC=150
VCE=-50V; IB=0
VEB=-5V; IC=0
IF=-3A
IF=-8A
Product Specification
BDX88C
MIN TYP. MAX UNIT
-100
V
-2.0
V
-3.0
V
-4.0
V
-2.8
V
1000
750
18000
100
-0.5
-5.0
mA
-1.0
mA
-1.0
mA
-1.8
V
-2.5
V
2