BDX77 Datasheet, PDF (2/3 Pages) Continental Device India Limited – Medium Power Switching and Amplifier Applications

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDX77
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage I_C=0.2A ;I_B=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.3A
VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.6A
VBEsat
Base-emitter saturation voltage
IC=6A; IB=0.6A
ICEO
Collector cut-off current
VCE=30V ;IB=0;
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
VBE
Base-emitter on voltage
Switching times
VCB=40V ;IE=0;T_j=150
VEB=5V; IC=0
IC=1A ; VCE=2V
IC=0.3A ; VCE=3V
IC=3A;VCE=2V
t_on
Turn-on time
to_ff
Turn-off time
IC=2A
IB1=-IB2=0.2A;
MIN TYP. MAX UNIT
80
V
100
V
5
V
1.0
V
1.5
V
2.0
V
0.2
mA
1.0
mA
0.5
mA
30
7.0
MHz
1.5
V
1.0
µs
4.0
µs
2