BDX18 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – PNP SILICON TRANSISTOR EPITAXIAL BASE

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDX18
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ; IB=0
V(BR) EBO Emitter-base breakdown voltage
IE=-1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A
VBE
Base-emitter voltage
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
IC=-4A;VCE=-4V
VCE=-90V;VBE=1.5V
VCE=-60V;VBE=1.5V;TC=150
VEB=-7V; IC=0
hFE
DC current gain
IC=-4A ; VCE=-4V
fT
Transition frequency
IC=-1A ; VCE=-10V;f=1MHz
MIN TYP. MAX UNIT
-60
V
-7
V
-1.1 V
-1.8 V
-5
-10
mA
-5 mA
20
70
4
MHz
2