BDW94 Datasheet, PDF (2/3 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDW94
VCEO(SUS)
Collector-emitter
sustaining voltage
BDW94A
BDW94B
IC=0.1A, IB=0
BDW94C
VCEsat-1
VCEsat-2
Collector-emitter saturation voltage IC=-5A ,IB=-20mA
Collector-emitter saturation voltage IC=-10A ,IB=-0.1A
VBEsat-1 Base-emitter saturation voltage
IC=-5A ,IB=-20mA
VBEsat-2
ICBO
Base-emitter saturation voltage
IC=-10A ,IB=-0.1A
BDW94
VCB=-45V, IE=0
Collector
cut-off current
BDW94A VCB=-60V, IE=0
BDW94B VCB=-80V, IE=0
BDW94C VCB=-100V, IE=0
BDW94
VCE=-45V, IB=0
ICEO
IEBO
hFE-1
Collector
cut-off current
BDW94A VCE=-60V, IB=0
BDW94B VCE=-80V, IB=0
BDW94C VCE=-100V, IB=0
Emitter cut-off current
VEB=-5V; IC=0
DC current gain
IC=-3A ; VCE=-3V
hFE-2
DC current gain
IC=-5A ; VCE=-3V
hFE-3
VF-1
VF-2
DC current gain
Forward diode voltage
Forward diode voltage
IC=-10A ; VCE=-3V
IF=-5A
IF=-10A
Product Specification
BDW94/A/B/C
MIN
-45
-60
-80
-100
TYP.
MAX UNIT
V
-2.0
V
-3.0
V
-2.5
V
-4.0
V
-0.1
mA
-1.0
mA
1000
750
100
-2.0
mA
20000
-2.0
V
-4.0
V
2