BDW93A Datasheet, PDF (2/3 Pages) Savantic, Inc. – BDW93/A/B/CSilicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDW93
VCEO(SUS)
Collector-emitter
sustaining voltage
BDW93A
BDW93B
IC=0.1A, IB=0
BDW93C
VCEsat-1
VCEsat-2
VBEsat-1
VBEsat-2
ICBO
ICEO
IEBO
hFE-1
hFE-2
hFE-3
VF-1
VF-2
Collector-emitter saturation voltage IC=5A ,IB=20mA
Collector-emitter saturation voltage IC=10A ,IB=0.1A
Base-emitter saturation voltage
IC=5A ,IB=20mA
Base-emitter saturation voltage
IC=10A ,IB=0.1A
BDW93
VCB=45V, IE=0
Collector
cut-off current
BDW93A
BDW93B
VCB=60V, IE=0
VCB=80V, IE=0
BDW93C VCB=100V, IE=0
BDW93
VCE=45V, IB=0
Collector
cut-off current
BDW93A
BDW93B
VCE=60V, IB=0
VCE=80V, IB=0
BDW93C VCE=100V, IB=0
Emitter cut-off current
VEB=5V; IC=0
DC current gain
IC=3A ; VCE=3V
DC current gain
IC=5A ; VCE=3V
DC current gain
IC=10A ; VCE=3V
Forward diode voltage
IF=5A
Forward diode voltage
IF=10A
Product Specification
BDW93/A/B/C
MIN TYP. MAX UNIT
45
60
V
80
100
2.0
V
3.0
V
2.5
V
4.0
V
0.1
mA
1000
750
100
1.0
mA
2
mA
20000
2.0
V
4.0
V
2