BDV65 Datasheet, PDF (2/3 Pages) Power Innovations Ltd – NPN SILICON POWER DARLINGTONS

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDV65/65A/65B/65C
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDV65
V(BR)CEO
Collector-emitter
breakdown voltage
BDV65A
BDV65B
IC=30mA, IB=0
BDV65C
VCEsat
VBE
ICBO
ICEO
IEBO
hFE
VEC
Collector-emitter saturation voltage IC=5A ,IB=20mA
Base-emitter on voltage
BDV65
Collector
cut-off current
BDV65A
BDV65B
BDV65C
BDV65
IC=5A ; VCE=4V
VCB=60V, IE=0
VCB=30V, IE=0;TC=150
VCB=80V, IE=0
VCB=40V, IE=0;TC=150
VCB=100V, IE=0
VCB=50V, IE=0;TC=150
VCB=120V, IE=0
VCB=60V, IE=0;TC=150
VCE=30V, IB=0
Collector
cut-off current
BDV65A
BDV65B
VCE=40V, IB=0
VCE=50V, IB=0
BDV65C VCE=60V, IB=0
Emitter cut-off current
VEB=5V; IC=0
DC current gain
IC=5A ; VCE=4V
Diode forward voltage
IE=10A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
MIN TYP. MAX UNIT
60
80
V
100
120
2.0
V
2.5
V
0.4
2.0
0.4
2.0
mA
0.4
2.0
0.4
2.0
2
mA
1000
5
mA
3.5
V
MAX
1.0
UNIT
/W
2