BDT65C Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=30mA, IB=0
VCEsat-1 Collector-emitter saturation voltage IC=5A ,IB=20mA
VCEsat-2 Collector-emitter saturation voltage IC=10A ,IB=100mA
VBE
Base-emitter on voltage
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IC=5A ; VCE=4V
VCB=120V, IE=0
VCB=60V, IE=0;T_j=150
VCE=60V, IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=5A ; VCE=4V
hFE-3
DC current gain
IC=12A ; VCE=4V
VF-1
Forward diode voltage
IF=5A
VF-2
Forward diode voltage
IF=12A
CC
Collector capacitance
IE=0 ; VCB=10V;f=1MHz
ton
Turn-on time
toff
Turn-off time
IC=5A ,IBon=-IBoff=20mA
Product Specification
BDT65C
MIN TYP. MAX UNIT
120
V
2.0
V
3.0
V
2.5
V
0.4
2.0
mA
0.2
mA
5
mA
1500
1000
1000
2.0
V
2.0
V
200
pF
1.0
2.5
µs
6.0
10
µs
2