2SD869 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – HORIZONTAL DEFLECTION POWER TRANSISTOR(NPN)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD869
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=200m A;IC=0
VCEsat Collector-emitter saturation voltage IC=3 A;IB=0.8 A
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
hFE
DC current gain
VF
Diode forward voltage
IC=3 A;IB=0.8 A
VCB=500V;IE=0
IC=0.5A ; VCE=5V
IF=3.5A
fT
Transition frequency
IC=0.1A ; VCE=10V
COB
Collector output capacitance
tf
Fall time
IE=0 ; VCB=10V;f=1MHz
IC=3A;IB1_end=0.8A
MIN TYP. MAX UNIT
5
V
8.0
V
1.5
V
10
µA
8
2.0
V
3
MHz
95
pF
1.0
µs
2