2SD2148 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2148
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA , IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA , IC=0
VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.4A
VBEsat
Base-emitter saturation voltage
IC=7A ;IB=1.4A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
VCB=800V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
IC=7A ; VCE=5V
MIN TYP. MAX UNIT
700
V
5
V
5.0
V
1.5
V
10
µA
10
µA
8
4
2