2SD2125 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – NPN TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2125
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=200mA , IC=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
ICBO
Collector cut-off current
VCB=500V; IE=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=10V
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
V_F
Diode forward voltage
IF=6A
t_f
Fall time
ICP=5A ;IBL=1A;VCC=100V
MIN TYP. MAX UNIT
5
V
3.0 5.0
V
1.5
V
10
µA
8
20
5
3
MHz
165
pF
2.0
V
0.5
µs
2