2SD2079 Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=6mA
VCEsat-2 Collector-emitter saturation voltage IC=5A ;IB=20mA
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=6mA
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE-1
DC current gain
IC=3A ; VCE=3V
hFE-2
DC current gain
IC=5A ; VCE=3V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IB1=-IB2=6mA
VCCA30V ,RL=10B
Product Specification
2SD2079
MIN TYP. MAX UNIT
100
V
1.5
V
2.5
V
2.5
V
100
µA
2.5
mA
2000
15000
1000
1.0
µs
4.0
µs
2.5
µs
2