2SD2025 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2025
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=50µA; IE=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=2A ; VCE=3V
fT
Transition frequency
IC=0.2A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
MIN TYP. MAX UNIT
100
V
100
V
1.5
V
10
µA
3.0
mA
1000
20000
40
MHz
50
pF
2