2SD2017 Datasheet, PDF (2/3 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2017
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
250
V
VCEsat Collector-emitter saturation voltage IC=2A ;IB=2mA
1.5
V
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
IC=2A ;IB=2mA
VCB=300V; IE=0
VEB=20V; IC=0
IC=2A ; VCE=2V
2000
2.0
V
100
µA
10
mA
fT
Transition frequency
IE=-1A ; VCE=12V
20
MHz
COB
Collector output capacitance
Switching times
f=1MHz;VCB=10V
65
pF
ton
Turn-on time
ts
Storage time
tf
Fall time
0.6
µs
IC=2.0A ;IB1=5mA;IB2=-10mA
VCC=100V ,RL=50@
16.0
µs
3.0
µs
2