2SD2000 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power switching)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2000
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=25mA , IB=0
60
VCEsat Collector-emitter saturation voltage IC=4A;IB=0.4A
VBEsat Base-emitter saturation voltage
IC=4A;IB=0.4A
ICBO
Collector cut-off current
VCB=80V;IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
70
hFE-2
DC current gain
IC=4A ; VCE=4V
20
fT
Transition frequency
IC=0.2A; VCE=12V;f=10MHz
Switching times
V
1.5
V
2.0
V
100
µA
100
µA
250
80
MHz
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
IC=4A ;IB1=0.4A
IB2=-0.4A;VCC=50V
0.3
µs
1.0
µs
0.2
µs
h_FE-1 Classifications
Q
P
70-150
120-250
2