2SD1911 Datasheet, PDF (2/3 Pages) Wing Shing Computer Components – Silicon Diffused Power Transistor(GENERAL DESCRIPTION)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1911
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0
VCE(sat) Collector-emitter saturation voltage IC=4.5A ; IB=1.2A
VBE(sat) Base-emitter saturation voltage
IC=4.5A ; IB=1.2A
ICBO
Collector cut-off current
VCB=800V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
V_F
Diode forward voltage
IF=5A
MIN TYP. MAX UNIT
600
V
5.0
V
1.5
V
10
µA
50
200
mA
8
25
2.0
V
2