2SD1849 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – SILICON NPN TRIPLE DIFFUSED PLANAR TYPE HORIZONTAL DEFLECTION OUTPUT

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1849
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=500mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.4A
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.4A
ICBO
Collector cut-off current
VCB=750V; IE=0
VCB=1500V; IE=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=10V
fT
Transition frequency
IC=1A ; VCE=10V;f=0.5MHz
VF
Diode forward voltage
IC=7A
MIN TYP. MAX UNIT
7
V
8.0
V
1.5
V
10
µA
1.0
mA
5
25
4
2
MHz
2.0
V
2