2SD1765 Datasheet, PDF (2/3 Pages) Rohm – EPITAXIAL PLANAR NPN SILICON DARLINGTON TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1765
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-base breakdown voltage
IC=50µA; IC=0
V(BR)CEO Collector-emitter breakdown voltage IC=5mA;IB=0
VCEsat Collector-emitter saturation voltage IC=1A ;IB=1mA
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=2V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
100
V
100
V
1.5
V
10
µA
3.0
mA
1000
10000
25
pF
2