2SD1541 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – SI NPN TRIPLE DIFFUSED JUNCTION MESA

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1541
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=500mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.75A
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.75A
ICBO
Collector cut-off current
VCB=750V; IE=0
VCB=1500V; IE=0
hFE
DC current gain
IC=2A ; VCE=10V
VF
Diode forward voltage
IC=-4A
Switching times
tstg
Storage time
tf
Fall time
IC=2A
IBend=0.75A;LLeak=5µH
MIN TYP. MAX UNIT
5
V
5.0
V
1.5
V
50
µA
1
mA
4
12
2.2
V
3.0
7.0
µs
0.75
µs
2