2SD1457 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1457 2SD1457A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2SD1457
2SD1457A
IC=2A ;L=10mH
V(BR)EBO Emitter-base breakdown voltage
IE=0.1A ;IC=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=60mA
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=60mA
ICBO
Collector cut-off current
VCB=200V; IE=0
hFE
DC current gain
IC=2A ; VCE=2V
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
MIN TYP. MAX UNIT
150
V
200
5
V
1.5
V
2.5
V
100
µA
700
10000
15
MHz
h_FE Classifications
Q
P
O
700-2500 2000-5000 4000-10000
2